SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 3

• Manufacturer Part Number: SMBT3906DW1T1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 40V
• Manufacturer: ON Semiconductor

Specifications of SMBT3906DW1T1G

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 40 V
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.25 V
• Gain Bandwidth Product Ft: 250 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 200 mA
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 55 C

+0.5 V
10.6 V
7.0
5.0
3.0
2.0
1.0
500
300
200
100
10
70
50
30
20
10
7
5
0.1
1.0
0.2 0.3 0.5 0.7
2.0 3.0
< 1 ns
DUTY CYCLE = 2%
Figure 1. Delay and Rise Time
Figure 5. Turn −On Time
Equivalent Test Circuit
I
Figure 3. Capacitance
C
300 ns
, COLLECTOR CURRENT (mA)
5.0 7.0
REVERSE BIAS (VOLTS)
1.0
C
10
C
obo
ibo
10 k
2.0 3.0
t
d
@ V
20
TYPICAL TRANSIENT CHARACTERISTICS
OB
5.0 7.0 10
= 0 V
30
t
r
* Total shunt capacitance of test jig and connectors
@ V
3 V
50
CC
= 3.0 V
70
275
I
C
C
/I
100
s
20 30 40
B
< 4 pF*
http://onsemi.com
= 10
15 V
2.0 V
40 V
200
DUTY CYCLE = 2%
3
10 < t
T
T
J
J
= 25C
= 125C
5000
3000
2000
1000
1
500
300
200
100
700
500
300
200
100
70
50
30
20
10
< 500 ms
70
50
7
5
1.0
1.0
+9.1 V
0
V
I
C
CC
/I
B
2.0 3.0
Q
2.0 3.0
= 40 V
= 10
T
t
1
Figure 2. Storage and Fall Time
I
I
C
C
10.9 V
Figure 4. Charge Data
, COLLECTOR CURRENT (mA)
5.0 7.0
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 6. Fall Time
< 1 ns
Equivalent Test Circuit
10
I
1N916
C
10 k
/I
B
= 10
20
20
I
C
/I
B
30
= 20
30
50
50 70 100
Q
3 V
A
V
I
70
B1
CC
= I
100
= 40 V
275
B2
C
s
< 4 pF*
200
200