SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 4

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SMBT3906DW1T1G

Manufacturer Part Number
SMBT3906DW1T1G
Description
Transistors Bipolar - BJT SS GP XSTR PNP 40V
Manufacturer
ON Semiconductor
Datasheet

Specifications of SMBT3906DW1T1G

Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 40 V
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Collector-emitter Saturation Voltage
- 0.25 V
Gain Bandwidth Product Ft
250 MHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
- 200 mA
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
5.0
4.0
3.0
2.0
1.0
300
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
30
20
10
0
0.1
0.1
0.1
SOURCE RESISTANCE = 2.0 k
I
C
SOURCE RESISTANCE = 200 W
I
= 100 mA
0.2
C
= 1.0 mA
0.2
0.2
0.4
0.3
Figure 11. Input Impedance
0.3
SOURCE RESISTANCE = 200 W
I
I
I
C
C
C
Figure 9. Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 0.5 mA
1.0
f, FREQUENCY (kHz)
0.5
0.5
Figure 7.
2.0
0.7
0.7
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
1.0
1.0
4.0
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
(V
CE
10
2.0
2.0
(V
= − 5.0 Vdc, T
3.0
3.0
CE
20
NOISE FIGURE VARIATIONS
= − 10 Vdc, f = 1.0 kHz, T
5.0
40
5.0
h PARAMETERS
http://onsemi.com
7.0
7.0
100
A
10
10
= 25C, Bandwidth = 1.0 Hz)
4
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
12
10
70
50
30
20
10
10
8
6
4
2
0
7
5
0.1
0.1
0.1
A
f = 1.0 kHz
= 25C)
0.2
0.2
0.2
Figure 12. Voltage Feedback Ratio
0.4
Figure 10. Output Admittance
0.3
R
0.3
g
I
I
, SOURCE RESISTANCE (k OHMS)
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
1.0
0.5
0.5
I
C
Figure 8.
0.7
0.7
2.0
= 0.5 mA
I
C
= 1.0 mA
1.0
1.0
4.0
2.0
2.0
10
3.0
3.0
20
I
C
I
5.0
5.0
C
= 100 mA
40
= 50 mA
7.0
7.0
100
10
10

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