SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 4

• Manufacturer Part Number: SMBT3906DW1T1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 40V
• Manufacturer: ON Semiconductor

Specifications of SMBT3906DW1T1G

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 40 V
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.25 V
• Gain Bandwidth Product Ft: 250 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 200 mA
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 55 C

5.0
4.0
3.0
2.0
1.0
300
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
30
20
10
0
0.1
0.1
0.1
SOURCE RESISTANCE = 2.0 k
I
C
SOURCE RESISTANCE = 200 W
I
= 100 mA
0.2
C
= 1.0 mA
0.2
0.2
0.4
0.3
Figure 11. Input Impedance
0.3
SOURCE RESISTANCE = 200 W
I
I
I
C
C
C
Figure 9. Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 0.5 mA
1.0
f, FREQUENCY (kHz)
0.5
0.5
Figure 7.
2.0
0.7
0.7
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
1.0
1.0
4.0
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
(V
CE
10
2.0
2.0
(V
= − 5.0 Vdc, T
3.0
3.0
CE
20
NOISE FIGURE VARIATIONS
= − 10 Vdc, f = 1.0 kHz, T
5.0
40
5.0
h PARAMETERS
http://onsemi.com
7.0
7.0
100
A
10
10
= 25C, Bandwidth = 1.0 Hz)
4
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
12
10
70
50
30
20
10
10
8
6
4
2
0
7
5
0.1
0.1
0.1
A
f = 1.0 kHz
= 25C)
0.2
0.2
0.2
Figure 12. Voltage Feedback Ratio
0.4
Figure 10. Output Admittance
0.3
R
0.3
g
I
I
, SOURCE RESISTANCE (k OHMS)
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
1.0
0.5
0.5
I
C
Figure 8.
0.7
0.7
2.0
= 0.5 mA
I
C
= 1.0 mA
1.0
1.0
4.0
2.0
2.0
10
3.0
3.0
20
I
C
I
5.0
5.0
C
= 100 mA
40
= 50 mA
7.0
7.0
100
10
10