SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 5

• Manufacturer Part Number: SMBT3906DW1T1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 40V
• Manufacturer: ON Semiconductor

Specifications of SMBT3906DW1T1G

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 40 V
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.25 V
• Gain Bandwidth Product Ft: 250 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 200 mA
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 55 C

2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
0.01
1.0
I
C
T
J
= 1.0 mA
= 25C
2.0
0.2
0.02
5.0
Figure 15. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.3
0.03
10
0.5
V
0.05
20
BE(sat)
V
CE(sat)
0.7
@ I
0.07
@ I
C
TYPICAL STATIC CHARACTERISTICS
1.0
/I
V
C
B
BE
/I
50
Figure 14. Collector Saturation Region
= 10
10 mA
T
B
0.1
J
@ V
= 10
= +125C
CE
Figure 13. DC Current Gain
100
= 1.0 V
2.0
- 55C
+25C
I
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
I
B
, BASE CURRENT (mA)
0.2
3.0
200
5
0.3
5.0
30 mA
- 0.5
- 1.0
- 1.5
- 2.0
1.0
0.5
0
7.0
0.5
0
q
VC
10
20
0.7
FOR V
Figure 16. Temperature Coefficients
q
VB
40
CE(sat)
1.0
FOR V
I
C
20
, COLLECTOR CURRENT (mA)
60
BE(sat)
30
80
2.0
100
+25C TO +125C
- 55C TO +25C
50
3.0
120
70
+25C TO +125C
100 mA
- 55C TO +25C
140
V
5.0
100
CE
T
160
= 1.0 V
J
= 25C
7.0
180
200
10
200