SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 2
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SMBT3906DW1T1G
Manufacturer Part Number
SMBT3906DW1T1G
Description
Transistors Bipolar - BJT SS GP XSTR PNP 40V
Manufacturer
ON Semiconductor
Datasheet
1.SMBT3906DW1T1G.pdf
(6 pages)
Specifications of SMBT3906DW1T1G
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
- 40 V
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 5 V
Collector-emitter Saturation Voltage
- 0.25 V
Gain Bandwidth Product Ft
250 MHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
- 200 mA
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −5.0 Vdc, I
B
B
B
B
C
C
C
C
CE
CE
C
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
(V
(I
(V
(I
= −100 mAdc, R
C
B1
= −1.0 Vdc)
= −1.0 Vdc)
CC
CC
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −10 mAdc, I
= I
= −3.0 Vdc, V
= −3.0 Vdc, I
(Note 2)
B2
= −1.0 mAdc)
Characteristic
S
B1
= 1.0 k W, f = 1.0 kHz)
C
(T
BE
= −1.0 mAdc)
= −10 mAdc)
A
= 0.5 Vdc)
= 25C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
h
CEX
NF
I
h
h
h
BL
f
t
obo
t
FE
t
t
ibo
oe
T
re
fe
d
s
ie
r
f
−0.65
−5.0
Min
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
10.0
−50
−50
300
400
225
4.5
4.0
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
kW
dB
ns
ns
−
−
− 4