SMBT3906DW1T1G ON Semiconductor, SMBT3906DW1T1G Datasheet - Page 2

• Manufacturer Part Number: SMBT3906DW1T1G
• Description: Transistors Bipolar - BJT SS GP XSTR PNP 40V
• Manufacturer: ON Semiconductor

Specifications of SMBT3906DW1T1G

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 40 V
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Collector-emitter Saturation Voltage: - 0.25 V
• Gain Bandwidth Product Ft: 250 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: - 200 mA
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 55 C

2. Pulse Test: Pulse Width  300 ms; Duty Cycle  2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −5.0 Vdc, I
B
B
B
B
C
C
C
C
CE
CE
C
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
(V
(I
(V
(I
= −100 mAdc, R
C
B1
= −1.0 Vdc)
= −1.0 Vdc)
CC
CC
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −10 mAdc, I
= I
= −3.0 Vdc, V
= −3.0 Vdc, I
(Note 2)
B2
= −1.0 mAdc)
Characteristic
S
B1
= 1.0 k W, f = 1.0 kHz)
C
(T
BE
= −1.0 mAdc)
= −10 mAdc)
A
= 0.5 Vdc)
= 25C unless otherwise noted)
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2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
h
CEX
NF
I
h
h
h
BL
f
t
obo
t
FE
t
t
ibo
oe
T
re
fe
d
s
ie
r
f
−0.65
−5.0
Min
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
10.0
−50
−50
300
400
225
4.5
4.0
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
kW
dB
ns
ns
−
−
− 4