PBSS4160PANP,115 NXP Semiconductors, PBSS4160PANP,115 Datasheet - Page 16
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PBSS4160PANP,115
Manufacturer Part Number
PBSS4160PANP,115
Description
Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4160PANP115.pdf
(21 pages)
Specifications of PBSS4160PANP,115
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
90 mV, - 125 mV
Maximum Dc Collector Current
1.5 A
Gain Bandwidth Product Ft
175 MHz, 125 MHz
Dc Collector/base Gain Hfe Min
290, 245
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DFN2020-6
Continuous Collector Current
1 A
Dc Current Gain Hfe Max
430, 245
Maximum Power Dissipation
1450 mW
Minimum Operating Temperature
- 55 C
NXP Semiconductors
11. Test information
PBSS4160PANP
Product data sheet
Fig. 26. TR1 (NPN): BISS transistor switching time definition
Fig. 27. TR1 (NPN): Test circuit for switching times
All information provided in this document is subject to legal disclaimers.
14 January 2013
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
© NXP B.V. 2013. All rights reserved
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