MT46H16M16LFBF-5:H Micron Technology Inc, MT46H16M16LFBF-5:H Datasheet - Page 25
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H16M16LFBF-5:H
Manufacturer Part Number
MT46H16M16LFBF-5:H
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H16M16LFBF-5:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-5:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-5:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 9: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Parameter
Half-clock period
Data-out High-Z
window from
CK/CK#
Data-out Low-Z window
from CK/CK#
Address and con-
trol input hold time
Address and con-
trol input hold time
Address and con-
trol input setup
time
Address and con-
trol input setup
time
Address and control input
pulse width
LOAD MODE REGISTER
command cycle time
DQ–DQS hold, DQS to first
DQ to go nonvalid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE
command
ACTIVE to ACTIVE/ACTIVE to
AUTO REFRESH command
period
Active-to-read or write delay
Refresh period
Average periodic refresh in-
terval
AUTO REFRESH command
period
PRECHARGE command peri-
od
DQS read
preamble
CL = 3
CL = 2
CL = 3
slew
slow
slew
slew
slow
slew
rate
rate
rate
rate
fast
fast
Symbol
t
t
t
t
t
t
t
t
RPRE
MRD
t
t
t
t
QHS
RCD
REFI
t
t
IPW
RAS
t
t
t
REF
RFC
t
t
QH
IH
IH
HP
HZ
RC
RP
LZ
IS
IS
F
S
F
S
t
t
Min
t
QHS
HP -
CH,
t
1.0
0.9
1.1
0.9
1.1
2.3
0.9
40
55
15
72
15
CL
2
–
–
–
–
–
-5
Electrical Specifications – AC Operating Conditions
DD
70,000
Max
/V
5.0
6.5
0.5
7.8
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
DDQ
= 1.70–1.95V
t
t
Min
58.2
16.2
16.2
t
QHS
HP -
CH,
t
1.0
1.0
1.2
1.0
1.2
2.5
0.9
42
72
CL
25
2
–
–
–
–
–
-54
256Mb: x16, x32 Mobile LPDDR SDRAM
70,000
Max
5.0
6.5
0.5
7.8
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
Min
t
QHS
HP -
CH,
t
1.0
1.0
1.2
1.1
1.2
2.6
0.9
42
60
18
72
18
CL
2
–
–
–
–
–
-6
70,000
Max
0.65
5.0
6.5
7.8
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
t
t
Min
67.5
22.5
22.5
t
QHS
HP -
CH,
t
1.0
1.3
1.5
1.3
1.5
2.6
0.9
45
72
CL
2
–
–
–
–
–
©2008 Micron Technology, Inc. All rights reserved.
-75
70,000
Max
0.75
6.0
6.5
7.8
1.1
64
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
μs
CK
Notes
19, 20
15, 21
15, 21
13, 17
18
19
16
22
23