MT46H16M16LFBF-5:H Micron Technology Inc, MT46H16M16LFBF-5:H Datasheet - Page 64
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MT46H16M16LFBF-5:H
Manufacturer Part Number
MT46H16M16LFBF-5:H
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H16M16LFBF-5:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-5:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-5:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 27: READ-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQ
DQ
DQS
DQS
CK#
CK#
DM
DM
CK
CK
3,4
3,4
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
2. BST = BURST TERMINATE command; page remains open.
3. D
4. D
5. Shown with nominal
6. CKE = HIGH.
1
1
mand shown can be NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
2
2
CL = 3
T1n
D
t
AC,
OUT
NOP
T2
NOP
T2
t
64
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
Col b
T3
T3
t
DQSQ.
1
D
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
Col b
T4
D
T4
NOP
IN
1
t
(NOM)
DQSS
T4n
T4n
D
IN
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
D
T5
NOP
NOP
IN
IN
T5n
D
T5n
D
IN
IN