2SC4207-GR(TE85L,F Toshiba, 2SC4207-GR(TE85L,F Datasheet - Page 2
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2SC4207-GR(TE85L,F
Manufacturer Part Number
2SC4207-GR(TE85L,F
Description
Transistors Bipolar - BJT 150mA 50V
Manufacturer
Toshiba
Datasheet
1.2SC4207-GRTE85LF.pdf
(4 pages)
Specifications of 2SC4207-GR(TE85L,F
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.15 A
Gain Bandwidth Product Ft
80 MHz (Min)
Dc Collector/base Gain Hfe Min
200
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
USV
Continuous Collector Current
150 mA
Dc Current Gain Hfe Max
400
Maximum Power Dissipation
300 mW
Factory Pack Quantity
3000
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note 2: h
( ) marking symbol
Characteristics
FE
classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
(Ta = 25°C) (Q1, Q2 common)
V
Symbol
CE (sat)
I
I
CBO
EBO
h
C
(Note 2)
f
FE
T
ob
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
= 100 mA, I
= 60 V, I
= 5 V, I
= 6 V, I
= 10 V, I
= 10 V, I
2
C
C
Test Condition
E
C
E
= 0
= 2 mA
B
= 0
= 0, f = 1 MHz
= 1 mA
= 10 mA
120
Min
80
⎯
⎯
⎯
⎯
Typ.
0.1
⎯
⎯
⎯
⎯
2
2007-11-01
2SC4207
0.25
Max
700
0.1
0.1
3.5
⎯
MHz
Unit
μA
μA
pF
V