BC 847S H6794 Infineon Technologies, BC 847S H6794 Datasheet - Page 3

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BC 847S H6794

Manufacturer Part Number
BC 847S H6794
Description
Transistors Bipolar - BJT NPN Silicon AF Transistor Arrays
Manufacturer
Infineon Technologies
Datasheet

Specifications of BC 847S H6794

Rohs
yes
Part # Aliases
BC847SH6794XT BC847SH6794XTSA1 SP000857072
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
1
C
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 1 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 10 µA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 45 V, I
= 30 V, I
C
E
E
CE
CE
B
B
= 0
B
B
E
E
CE
CE
= 0 , BC846S/U
= 0 , BC847S
B
B
= 0 , BC846S/U
= 0 , BC847S
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V
1)
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
h
V
V
V
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
BC846S/ BC846U/ BC847S
min.
200
580
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
250
290
200
700
900
660
typ.
90
65
45
80
50
6
-
-
-
0.015
max.
450
250
600
700
770
5
2012-04-04
-
-
-
-
-
-
-
-
Unit
V
µA
-
mV

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