PUMB9,125 NXP Semiconductors, PUMB9,125 Datasheet - Page 6

• Manufacturer Part Number: PUMB9,125
• Description: Transistors Switching - Resistor Biased
• Manufacturer: NXP Semiconductors

Specifications of PUMB9,125

• Rohs: yes

NXP Semiconductors
7. Characteristics
PEMB9_PUMB9
Product data sheet
Table 8.
T
[1]
Symbol
Per transistor
I
I
I
h
V
V
V
R1
R2/R1
C
f
CBO
CEO
EBO
T
amb
FE
CEsat
I(off)
I(on)
c
Characteristics of built-in transistor
= 25

C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
transition frequency
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Conditions
V
V
V
T
V
V
I
V
V
V
f = 1 MHz
V
f = 100 MHz
C
CB
CE
CE
j
EB
CE
CE
CE
CB
CE
= 150 C
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
= 5 V; I
C
C
B
C
C
E
E
B
B
= 0.25 mA
= 0 A
= 5 mA
= 100 A
= 10 mA;
C
= i
= 0 A
= 0 A
= 0 A;
= 1 mA
e
= 0 A;
PEMB9; PUMB9
[1]
Min
-
-
-
-
100
-
-
1.4
7
3.7
-
-
Typ
-
-
-
-
-
-
0.7
0.8
10
4.7
-
180
© NXP B.V. 2011. All rights reserved.
Max
100
1
5
150
-
100
0.5
-
13
5.7
3
-
Unit
nA
A
A
A
mV
V
V
k
pF
MHz
6 of 14