PUMB9,125 NXP Semiconductors, PUMB9,125 Datasheet - Page 7

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PUMB9,125

Manufacturer Part Number
PUMB9,125
Description
Transistors Switching - Resistor Biased
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB9,125

Rohs
yes
NXP Semiconductors
PEMB9_PUMB9
Product data sheet
Fig 4.
Fig 6.
V
h
(V)
I(on)
-10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
10
10
-10
10
-1
-1
1
-10
-10
3
2
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
-1
-1
CE
amb
amb
amb
CE
amb
amb
amb
= 5 V
= 0.3 V
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
-1
-1
(1)
(2)
(3)
-10
-10
(3)
(2)
I
I
C
C
All information provided in this document is subject to legal disclaimers.
(1)
006aac789
(mA)
006aac791
(mA)
Rev. 3 — 22 November 2011
PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
-10
-10
2
2
Fig 5.
Fig 7.
V
V
CEsat
(V)
(V)
-10
-10
I(off)
-10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
-10
-1
-1
-1
-2
-1
-10
-10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
C
-1
-1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
-1
PEMB9; PUMB9
(3)
-1
(2)
(1)
(2)
(3)
(1)
-10
I
C
(mA)
I
© NXP B.V. 2011. All rights reserved.
C
(mA)
006aac790
006aac792
-10
-10
2
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