TSA884CX RF Taiwan Semiconductor, TSA884CX RF Datasheet

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TSA884CX RF

Manufacturer Part Number
TSA884CX RF
Description
Transistors Bipolar - BJT PNP Transistor
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of TSA884CX RF

Rohs
yes
Absolute Maximum Rating
Electrical Specifications
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Features
Structure
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn On Time
Turn Off Time
Low Saturation Voltages
Excellent gain characteristics specified up to -50mA
Epitaxial Planar Type
PNP Silicon Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
(Ta = 25
(Ta = 25
o
C unless otherwise noted)
I
I
I
V
V
I
I
I
V
V
V
V
V
V
V
I
C
C
E
C
C
C
B1
CB
EB
CE
CE
CE
CE
CE
CB
CE
o
= -100uA, I
= -100uA, I
= -10mA, I
= -20mA, I
= -50mA, I
= -50mA, I
=-5mA, I
C unless otherwise noted)
= 120V, I
= 6V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
=10V, I
= 20V, f=1MHz
= -100V, I
DC
Pulse
Conditions
PNP Silicon Planar High Voltage Transistor
C
B2
C
= 0
=-100mA
B
C
C
C
C
B
B
B
=-10mA
C
E
E
C
= -50mA
= -1mA
= -50mA
= -100mA
= 0
= 0
= -2mA
= -10mA
= -10mA
= 0
= 0
= -50mA
1/4
PRODUCT SUMMARY
Ordering Information
TSA884CX RF
Part No.
V
Symbol
BV
BV
CE(SAT)
V
V
V
P
T
I
Symbol
V
V
C
CBO
T
CEO
CBO
CEO
I
EBO
TOT
STG
V
C
V
BV
BV
BV
CE(SAT)
CE(SAT)
J
h
h
h
BE(SAT)
Cob
I
Ton
Toff
I
BE(ON)
CBO
EBO
FE
FE
FE
f
T
CBO
CEO
EBO
1
2
3
1
2
-500V
-500V
-150mA
-0.5V @ I
Package
-500
-500
Min
150
SOT-23
80
-5
--
--
--
--
--
--
--
--
--
--
- 55 to +150
Limit
+150
-500
-500
-150
-500
0.3
C
-5
1500
Typ
/ I
110
15
50
--
--
--
--
--
--
--
--
--
--
--
--
B
= -50mA / -10mA
3Kpcs / 7” Reel
TSA884
Packing
Max
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
--
--
--
--
--
--
--
8
Version: D08
Unit
mA
o
o
W
V
V
V
C
C
Unit
MHz
nA
nA
nS
nS
pF
V
V
V
V
V
V

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TSA884CX RF Summary of contents

Page 1

... Base-Emitter on Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Turn On Time Turn Off Time PNP Silicon Planar High Voltage Transistor PRODUCT SUMMARY Ordering Information Part No. TSA884CX unless otherwise noted) Symbol DC Pulse o C unless otherwise noted) Conditions I = -100uA ...

Page 2

Electrical Characteristics Curve Figure 1. Static Characteristics Figure 3. V v.s. V CE(SAT) PNP Silicon Planar High Voltage Transistor o ( unless otherwise noted) BE(SAT 2/4 TSA884 Figure 2. DC Current Gain Figure 4. Power Derating ...

Page 3

Marking Diagram PNP Silicon Planar High Voltage Transistor SOT-23 Mechanical Drawing DIM Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, ...

Page 4

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...

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