PBSS9110D T/R NXP Semiconductors, PBSS9110D T/R Datasheet

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PBSS9110D T/R

Manufacturer Part Number
PBSS9110D T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS9110D T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
120 V
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
150 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Dc Current Gain Hfe Max
150 at 1 mA at 5 V
Maximum Power Dissipation
700 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS9110D,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS9110D
100 V, 1 A PNP low V
Rev. 03 — 22 November 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
CEsat
FE
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
C
≤ 1 ms
= −100 mA
= −1 A;
and I
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
170
Product data sheet
Max
−100
−1
−3
320
Unit
V
A
A

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PBSS9110D T/R Summary of contents

Page 1

... Features Low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS9110D 4. Marking Table 4. Type number PBSS9110D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm ...

Page 4

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 0.75 (K/W) 0.5 0. 0.2 0.1 0.05 10 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values duty cycle = th(j-a) (K/W) 1 0.75 2 0.5 10 0.33 0.2 0.1 0.05 10 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 1cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter cut-off CES current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter saturation BEsat voltage V base-emitter turn-on BEon voltage ...

Page 6

... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 4. DC current gain as a function of collector current; typical values −1 (V) (1) −0.8 (2) (3) −0.4 0 − ...

Page 7

... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω ...

Page 8

... NXP Semiconductors 8. Test information − − Fig 12. BISS transistor switching time definition V Fig 13. Test circuit for switching times PBSS9110D_3 Product data sheet (probe) oscilloscope 450 Ω − −0 −0.025 A; I ...

Page 9

... NXP Semiconductors 9. Package outline Fig 14. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS9110D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 10

... NXP Semiconductors 11. Soldering 3.30 Dimensions in mm Fig 15. Reflow soldering footprint SOT457 (SC-74) 5.05 Dimensions in mm Fig 16. Wave soldering footprint SOT457 (SC-74) PBSS9110D_3 Product data sheet 100 PNP low V 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 03 — 22 November 2009 PBSS9110D (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste ...

Page 11

... Revision history Document ID Release date PBSS9110D_3 20091122 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Wave soldering footprint SOT457 PBSS9110D_2 20060713 ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Legal information ...

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