PBSS4480X /T3 NXP Semiconductors, PBSS4480X /T3 Datasheet
PBSS4480X /T3
Specifications of PBSS4480X /T3
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PBSS4480X /T3 Summary of contents
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DATA SHEET book, halfpage PBSS4480X NPN low V Product data sheet Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS M3D109 (BISS) transistor CEsat 2004 Oct 25 ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat FEATURES • High h and low V at high current operation FE CEsat • High collector current capability: I • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g. fan, motor • Strobe flash units for DSC and mobile phones • ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC repetitive peak collector current CRM I peak collector current ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 1600 P (1) tot (mW) 1200 (2) 800 (3) 400 0 − 100 2 (1) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction th(j-a) to ambient R thermal resistance from junction th(j-s) to soldering point Notes 1. Operated under pulsed conditions; pulse width t 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat (K/W) ( (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 (10) −1 10 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 1000 h FE (1) 800 (2) 600 400 (3) 200 0 − 100 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 1.2 V BEsat (V) (1) 0.8 (2) (3) 0.4 0 − 20 −55 °C. (1) T amb = 25 °C. (2) T amb = 100 °C. (3) T amb Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. 10 (4) (3) (2) ( ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat Reference mounting conditions 2.5 mm 0.5 mm 3.96 mm Fig.14 FR4, standard footprint 2.5 mm 0.5 mm 3.96 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm 2004 Oct 25 handbook, halfpage 1.6 mm 001aaa234 ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Oct ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...