PBSS4420D T/R NXP Semiconductors, PBSS4420D T/R Datasheet

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PBSS4420D T/R

Manufacturer Part Number
PBSS4420D T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4420D T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
20 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
300 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4420D,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5420D.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS4420D
20 V, 4 A NPN low V
Rev. 02 — 24 September 2008
Very low collector-emitter saturation resistance
Ultra low collector-emitter saturation voltage
4 A continuous collector current
Up to 15 A peak current
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough in Small Signal (BISS) transistor in a small
300 s;
0.02.
CEsat
(BISS) transistor
Conditions
open base
single pulse;
t
I
I
p
C
B
= 400 mA
= 4 A;
1 ms
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Typ
-
-
-
50
Product data sheet
Max
20
4
15
70
Unit
V
A
A
m

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PBSS4420D T/R Summary of contents

Page 1

PBSS4420D NPN low V Rev. 02 — 24 September 2008 1. Product profile 1.1 General description NPN low V SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5420D. 1.2 Features I Very low collector-emitter saturation ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4420D 4. Marking Table 4. Type number PBSS4420D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 5

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 6

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4420D_2 Product data sheet Characteristics Parameter Conditions collector-base cut-off ...

Page 7

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 1.0 (1) 0.8 (2) 0.6 (3) 0.4 0 (1) T ...

Page 8

... NXP Semiconductors 10 V CEsat (V) 1.0 ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition oscilloscope Bon Fig 14. Test circuit for switching times PBSS4420D_2 Product data sheet (probe) 450 R2 V DUT ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBSS4420D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 11

... NXP Semiconductors 11. Soldering 3.3 Fig 16. Reflow soldering footprint SOT457 (SC-74) 1.475 5.05 1.475 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS4420D_2 Product data sheet 3.45 1.95 0.95 2.825 0. 2.4 5.3 1. 2.85 Rev. 02 — 24 September 2008 PBSS4420D NPN low V (BISS) transistor CEsat 0.55 solder lands 0. solder resist solder paste ...

Page 12

... Document ID Release date PBSS4420D_2 20080924 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Figure • Section 11 • ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...

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