PBSS4240Y T/R NXP Semiconductors, PBSS4240Y T/R Datasheet

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PBSS4240Y T/R

Manufacturer Part Number
PBSS4240Y T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4240Y T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
230 MHz
Dc Collector/base Gain Hfe Min
350 at 100 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
UMT
Continuous Collector Current
2 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4240Y,115
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
MBD128
PBSS4240Y
40 V low V
NPN transistor
CEsat
Product data sheet
2001 Jul 13

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PBSS4240Y T/R Summary of contents

Page 1

DATA SHEET fpage MBD128 PBSS4240Y 40 V low V Product data sheet DISCRETE SEMICONDUCTORS NPN transistor CEsat 2001 Jul 13 ...

Page 2

... NXP Semiconductors 40 V low V NPN transistor CEsat FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • ...

Page 3

... NXP Semiconductors 40 V low V NPN transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors 40 V low V NPN transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...

Page 5

... NXP Semiconductors 40 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2001 Jul ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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