BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 3

• Manufacturer Part Number: BF621 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF621 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.05 A
• Maximum Power Dissipation: 1100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BF621,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2004 Dec 14
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP high-voltage transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
BF621
BF623
BF621
BF623
PARAMETER
open emitter
open base
open collector
T
amb
note 1
note 2
note 3
3
≤ 25 °C
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
BF621; BF623
Product data sheet
−300
−250
−300
−250
−5
−50
−100
−50
0.5
0.8
1.1
+150
150
+150
MAX.
V
V
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
UNIT
2
2
.
.