BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 7

• Manufacturer Part Number: BF621 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF621 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.05 A
• Maximum Power Dissipation: 1100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BF621,115

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 14
I
I
h
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
PNP high-voltage transistors
re
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −25 mA; V
= −30 mA; I
= i
= −10 mA; V
c
= 0 A; V
7
CB
CB
EB
CONDITIONS
= −200 V
= −200 V; T
= −5 V
B
CE
CE
CE
= −5 mA
= −30 V; f = 1 MHz
= −20 V
= −10 V; f = 100 MHz
j
= 150 °C
−
−
−
50
−
−
60
MIN.
BF621; BF623
Product data sheet
−10
−10
−50
−
−800
1.6
−
MAX.
nA
µA
nA
mV
pF
MHz
UNIT