PBSS304NZ /T3 NXP Semiconductors, PBSS304NZ /T3 Datasheet

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PBSS304NZ /T3

Manufacturer Part Number
PBSS304NZ /T3
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS304NZ /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
5.2 A
Gain Bandwidth Product Ft
130 MHz
Dc Collector/base Gain Hfe Min
300 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
300 at 0.5 A at 2 V
Maximum Power Dissipation
2000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS304NZ,135
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PZ.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS304NZ
60 V, 5.2 A NPN low V
Rev. 02 — 20 November 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
≤ 1 ms
= 200 mA
= 4 A;
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
39
Product data sheet
60
Max
5.2
10.4
55
Unit
V
A
A

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PBSS304NZ /T3 Summary of contents

Page 1

... Features Low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBSS304NZ 4. Marking Table 4. Type number PBSS304NZ PBSS304NZ_2 Product data sheet 60 V, 5.2 A NPN low V Pinning Description base collector emitter collector Ordering information Name Description SC-73 plastic surface-mounted package with increased heatsink; ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0. 0.50 0.33 0.20 0.10 0.05 10 ...

Page 5

... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 Z th(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 −1 10 −5 − Ceramic PCB standard footprint ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS304NZ_2 Product data sheet Characteristics C unless otherwise specified. Parameter Conditions collector-base cut-off current 150 ° ...

Page 7

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − − ...

Page 8

... NXP Semiconductors 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 −3 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 − ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS304NZ_2 Product data sheet 60 V, 5.2 A NPN low (probe) oscilloscope 450 Ω −0. 12 0.15 A ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS304NZ [1] For further information and the availability of packing methods, see PBSS304NZ_2 Product data sheet 60 V, 5.2 A NPN low V 6 ...

Page 11

... NXP Semiconductors 11. Soldering 1.3 1.2 (4×) (4×) Fig 16. Reflow soldering footprint 1.9 Fig 17. Wave soldering footprint PBSS304NZ_2 Product data sheet 60 V, 5.2 A NPN low V 7 3.85 3.6 3.5 0 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8.9 6 2.7 2.7 1.9 1.1 (2×) Rev. 02 — 20 November 2009 PBSS304NZ (BISS) transistor CEsat solder lands solder resist 6.1 7.65 solder paste ...

Page 12

... Revision history Document ID Release date PBSS304NZ_2 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering • Figure 17 “Wave soldering ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information ...

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