PBSS5240V T/R NXP Semiconductors, PBSS5240V T/R Datasheet

no-image

PBSS5240V T/R

Manufacturer Part Number
PBSS5240V T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5240V T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
150 MHz
Dc Collector/base Gain Hfe Min
300 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Continuous Collector Current
1.8 A
Maximum Power Dissipation
1200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS5240V,115
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5240V
40 V low V
PNP transistor
CEsat
Product data sheet
2003 Jan 30

Related parts for PBSS5240V T/R

PBSS5240V T/R Summary of contents

Page 1

DATA SHEET PBSS5240V 40 V low V Product data sheet DISCRETE SEMICONDUCTORS M3D744 PNP transistor CEsat 2003 Jan 30 ...

Page 2

... NXP Semiconductors 40 V low V PNP transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High collector current gain (h FE • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – ...

Page 3

... NXP Semiconductors 40 V low V PNP transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak repetitive collector current CRP I peak collector current CM I base current (DC) ...

Page 4

... NXP Semiconductors 40 V low V PNP transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors 40 V low V PNP transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 −1 −10 −1 −10 −10 = − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors 40 V low V PNP transistor CEsat −1.2 handbook, halfpage I C (4) (A) −0.8 −0.4 0 −0.4 −0.8 −1 °C. T amb = −7 mA. = −4.2 mA. ( −6.3 mA. = −3.5 mA. ( −5.6 mA. = −2.8 mA. ( −4.9 mA. = −2.1 mA. ( Fig.6 Collector current as a function of collector-emitter voltage ...

Page 7

... NXP Semiconductors 40 V low V PNP transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Jan ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords