BSV52 T/R NXP Semiconductors, BSV52 T/R Datasheet - Page 2

• Manufacturer Part Number: BSV52 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSV52 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 20 V
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BSV52,215

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 12 V).
APPLICATIONS
• High speed saturated switching applications, especially
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Jan 14
BSV52
BSV52
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
TYPE NUMBER
in portable equipment.
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
* = t : Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
B2*
(1)
open emitter
open base
open collector
T
2
amb
PINNING
DESCRIPTION
handbook, halfpage
≤ 25 °C
PACKAGE
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
−
−
−
−
−
−
−
−65
−
−65
MIN.
2
MAM255
Product data sheet
20
12
5
100
200
100
250
+150
150
+150
1
MAX.
VERSION
BSV52
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT