BSV52 T/R NXP Semiconductors, BSV52 T/R Datasheet - Page 3

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BSV52 T/R

Manufacturer Part Number
BSV52 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSV52 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
20 V
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Dc Collector/base Gain Hfe Min
25
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BSV52,215
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 14
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
e
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
Con
Boff
CE
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 10 mA; I
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= i
= 10 mA; V
C
C
C
= −1.5 mA
= 10 mA; I
= 1 V
= 1 mA
= 10 mA
= 50 mA
e
c
= 0; V
= 0; V
CB
CB
EB
3
note 1
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
EB
B
B
B
B
B
CE
= 300 µA
= 1 mA
= 5 mA
= 1 mA
= 5 mA
Bon
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
= 10 V; f = 100 MHz 400
= 3 mA;
j
= 125 °C
25
40
25
700
MIN.
VALUE
500
500
TYP. MAX. UNIT
Product data sheet
400
30
100
120
300
250
400
850
1. 2
4
4.5
10
4
6
20
10
10
BSV52
UNIT
K/W
nA
µA
nA
mV
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns

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