PBSS301ND T/R NXP Semiconductors, PBSS301ND T/R Datasheet
PBSS301ND T/R
Manufacturer Part Number
PBSS301ND T/R
Description
Transistors Bipolar - BJT NPN 20V 4A LOW SAT
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS301ND_TR.pdf
(14 pages)
Specifications of PBSS301ND T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
20 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
300 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS301ND,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS301PD.
I
I
I
I
I
I
I
I
I
I
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Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS301ND
20 V, 4 A NPN low V
Rev. 03 — 7 September 2007
Very low collector-emitter saturation resistance
Ultra low collector-emitter saturation voltage
4 A continuous collector current
Up to 15 A peak current
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
(BISS) transistor
Conditions
open base
single pulse;
t
I
I
p
C
B
= 400 mA
= 4 A;
1 ms
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Typ
-
-
-
50
Product data sheet
Max
20
4
15
70
Unit
V
A
A
m
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