PMBT2222 T/R NXP Semiconductors, PMBT2222 T/R Datasheet - Page 6

• Manufacturer Part Number: PMBT2222 T/R
• Description: Transistors Bipolar - BJT TRANS SW TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PMBT2222 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.6 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PMBT2222,215

NXP Semiconductors
8. Test information
PMBT2222_PMBT2222A
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 1.
Fig 2.
90 %
10 %
90 %
10 %
I
I
C
B
Switching time definition
V
Test circuit for switching times
CC
= 10 V; I
All information provided in this document is subject to legal disclaimers.
oscilloscope
t
d
C
t
on
= 150 mA; I
Rev. 6 — 12 November 2010
V
t
I
r
(probe)
450 Ω
Bon
= 15 mA; I
R1
R2
PMBT2222; PMBT2222A
R
B
V
BB
Boff
= −15 mA
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
Boff
(100 %)
s
t
NPN switching transistors
off
oscilloscope
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
t
f
I
006aaa003
C
(100 %)
t
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