PZT2222A /T3 NXP Semiconductors, PZT2222A /T3 Datasheet - Page 2

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PZT2222A /T3

Manufacturer Part Number
PZT2222A /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZT2222A /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
75 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
0.6 A
Maximum Power Dissipation
1150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PZT2222A,135
NXP Semiconductors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT2907A.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 14
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
2
≤ 25 °C; note 1
PINNING
handbook, halfpage
CONDITIONS
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
1
base
collector
emitter
2
4
3
DESCRIPTION
−65
−65
MIN.
MAM287
Product data sheet
1
PZT2222A
75
40
6
600
800
200
1.15
+150
150
+150
MAX.
2, 4
3
2
V
V
V
mA
mA
mA
W
°C
°C
°C
.
UNIT

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