MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet - Page 2

• Manufacturer Part Number: MZ0912B100Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-443A
• Maximum Power Dissipation: 290000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B100Y,114

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
QUICK REFERENCE DATA
Microwave performance at T
1997 Feb 20
The MZ0912B100Y has a SOT443A metal ceramic flange
Class-C; t
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and low
thermal resistance
Input and output matching cell allows an easier design
of circuits.
Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
NPN microwave power transistors
MODE OF OPERATION
p
= 10 s;
= 10 %
mb
25 C in a common base class-C broadband amplifier.
0.960 to 1.215
(GHz)
f
WARNING
V
(V)
50
CC
2
olumns
PINNING
handbook, halfpage
3
Fig.1 Simplified outline and symbol (SOT439A).
Fig.2 Simplified outline and symbol (SOT443A).
>100
Top view
(W)
P
Top view
L
PIN
1
2
3
MX0912B100Y; MZ0912B100Y
1
2
(dB)
G
>7
P
1
2
collector
emitter
base connected to flange
>42
(%)
3
DESCRIPTION
3
C
Product specification
MAM314
MAM045
see Figs 8 and 9
b
b
Z
( )
i
; Z
L
c
e
c
e