BCV65 T/R NXP Semiconductors, BCV65 T/R Datasheet - Page 2

• Manufacturer Part Number: BCV65 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV65 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV65,215

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BCV65
Product data sheet
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BCV65
Type number
BCV65
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
I
I
I
Per device
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Ordering information
Marking codes
Limiting values
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 27 July 2010
Description
plastic surface-mounted package; 4 leads
open emitter
open base
T
Conditions
amb
Marking code
97*
≤ 25 °C
NPN/PNP general-purpose transistor
[1]
Min
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
30
30
100
200
200
250
150
+150
+150
BCV65
Version
SOT143B
Unit
V
V
mA
mA
mA
mW
°C
°C
°C
2 of 11