BCV65 T/R NXP Semiconductors, BCV65 T/R Datasheet - Page 4

• Manufacturer Part Number: BCV65 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV65 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV65,215

NXP Semiconductors
BCV65
Product data sheet
Fig 1.
Fig 3.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
600
500
400
300
200
100
10
10
10
10
10
0
10
4
3
2
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
I
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
1
1
(1)
(3)
(2)
10
10
(1)
(2)
(3)
10
10
2
2
All information provided in this document is subject to legal disclaimers.
I
I
C
C
(mA)
(mA)
mgt727
mgt729
10
10
3
3
Rev. 4 — 27 July 2010
Fig 2.
Fig 4.
V
(mV)
(mV)
V
BEsat
BE
1200
1000
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
800
600
400
200
800
600
400
200
0
0
10
10
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
10
NPN/PNP general-purpose transistor
−1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
© NXP B.V. 2010. All rights reserved.
2
10
I
C
I
2
C
(mA)
BCV65
mgt730
mgt728
(mA)
10
10
3
3
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