BCM857BS /T3 NXP Semiconductors, BCM857BS /T3 Datasheet - Page 9

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BCM857BS /T3

Manufacturer Part Number
BCM857BS /T3
Description
Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCM857BS /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
175 MHz
Dc Collector/base Gain Hfe Min
250 at 10 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BCM857BS,135
NXP Semiconductors
10. Packing information
BCM857BV_BS_DS_6
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
Type number Package
BCM857BV
BCM857BS
BCM857DS
For further information and the availability of packing methods, see
T1: normal taping
T2: reverse taping
Packing methods
SOT666
SOT363
SOT457
Rev. 06 — 28 August 2009
Description
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
PNP/PNP matched double transistors
BCM857BV/BS/DS
Section
[2]
[3]
[2]
[3]
[1]
Packing quantity
3000 4000 8000 10000
-
-
-115
-125
-115
-125
14.
-
-115
-
-
-
-
© NXP B.V. 2009. All rights reserved.
-315 -
-
-
-
-
-
-
-135
-165
-135
-165
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