BCW72 T/R NXP Semiconductors, BCW72 T/R Datasheet - Page 2

• Manufacturer Part Number: BCW72 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCW72 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCW72,215

NXP Semiconductors
FEATURES
• Low current (100 mA)
• Low voltage (45 V)
• Low noise.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW69 and BCW70.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 19
BCW71
BCW72
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
K1∗
K2∗
(1)
open emitter
open base; I
open collector
T
amb
≤ 25 °C
2
PINNING
CONDITIONS
handbook, halfpage
C
Fig.1 Simplified outline (SOT23) and symbol.
= 2 mA
PIN
Top view
1
2
3
1
base
emitter
collector
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
BCW71; BCW72
DESCRIPTION
2
MAM255
50
45
5
100
200
200
250
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT