BCW72 T/R NXP Semiconductors, BCW72 T/R Datasheet - Page 3

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BCW72 T/R

Manufacturer Part Number
BCW72 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCW72 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCW72,215
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 19
R
I
I
h
V
V
V
C
f
F
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BCW71
BCW72
BCW71
BCW72
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= I
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
e
= 0; V
CB
CB
EB
= 20 V
= 20 V; T
= 5 V
CONDITIONS
note 1
3
CE
CE
CB
B
B
B
B
CE
CE
CE
= 0.5 mA
= 2.5 mA
= 0.5 mA
= 2.5 mA
= 5 V
= 5 V
= 10 V; f = 1 MHz
= 5 V
= 5 V; f = 100 MHz
= 5 V; R
CONDITIONS
j
= 100 °C
S
= 2 kΩ;
110
200
550
100
MIN.
VALUE
BCW71; BCW72
500
90
150
120
210
750
850
2.5
TYP.
Product data sheet
100
10
100
220
450
250
700
10
MAX.
UNIT
K/W
nA
μA
μA
mV
mV
mV
mV
mV
pF
MHz
dB
UNIT

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