PMBT3904 /T3 NXP Semiconductors, PMBT3904 /T3 Datasheet - Page 4

• Manufacturer Part Number: PMBT3904 /T3
• Description: Transistors Bipolar - BJT TRANS SW TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.2 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBT3904,235

NXP Semiconductors
Note
1. Pulse test: t
2004 Jan 12
handbook, halfpage
f
F
Switching times (between 10% and 90% levels); see Fig.3
t
t
t
t
T
d
r
s
f
SYMBOL
NPN switching transistor
V
(1) T
(2) T
(3) T
h FE
CE
500
400
300
200
100
= 1 V.
amb
amb
amb
0
10
Fig.2 DC current gain; typical values.
−1
= 150 °C.
= 25 °C.
= −55 °C.
transition frequency
noise figure
delay time
rise time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
1
(1)
(2)
(3)
PARAMETER
10
10
2
I C (mA)
MGU821
10
I
f = 100 MHz
I
f = 10 Hz to 15.7 kHz
I
I
C
C
Con
Boff
3
= 10 mA; V
= 100 µA; V
= −1 mA
= 10 mA; I
4
CONDITIONS
handbook, halfpage
CE
CE
Bon
T
(1) I
(2) I
(3) I
(4) I
Fig.3
= 20 V;
(mA)
amb
= 5 V; R
I C
= 1 mA;
250
200
150
100
50
B
B
B
B
= 25 °C.
0
= 5.5 mA.
= 5 mA.
= 4.5 mA.
= 3.5 mA.
0
Collector current as a function of
collector-emitter voltage.
S
= 1 kΩ;
(1)
2
(2)
(3)
(5) I
(6) I
(7) I
(8) I
(4)
300
−
−
−
−
−
4
B
B
B
B
= 3 mA.
= 2.5 mA.
= 2 mA.
= 1.5 mA.
MIN.
(5) (6)
6
(7)
−
5
35
35
200
50
MAX.
PMBT3904
Product data sheet
(9) I
(10) I
8
(10)
V CE (V)
(8)
(9)
MGU822
B
B
= 1 mA.
= 0.5 mA.
MHz
dB
ns
ns
ns
ns
10
UNIT