PMBT3904 /T3 NXP Semiconductors, PMBT3904 /T3 Datasheet - Page 5

• Manufacturer Part Number: PMBT3904 /T3
• Description: Transistors Bipolar - BJT TRANS SW TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBT3904 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.2 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBT3904,235

NXP Semiconductors
2004 Jan 12
handbook, halfpage
handbook, halfpage
NPN switching transistor
V CEsat
V
(1) T
(2) T
(3) T
Fig.4
I
(1) T
(2) T
(3) T
Fig.6
(mV)
V BE
C
(mV)
CE
/I
1200
1000
B
800
600
400
200
10
10
= 1 V.
= 10.
10
amb
amb
amb
amb
amb
amb
10
10
3
2
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current.
Collector-emitter saturation voltage as a
function of collector current.
1
1
(1)
(2)
(3)
10
10
(2)
(1)
(3)
10
10
2
2
I C (mA)
I C (mA)
MGU825
MGU823
10
10
3
3
5
handbook, halfpage
V BEsat
(mV)
I
(1) T
(2) T
(3) T
Fig.5
C
/I
1200
1000
B
800
600
400
200
= 10.
amb
amb
amb
10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter saturation voltage as a
function of collector current.
1
10
(1)
(2)
(3)
10
PMBT3904
Product data sheet
2
I C (mA)
MGU824
10
3