PMBT5550 /T3 NXP Semiconductors, PMBT5550 /T3 Datasheet

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PMBT5550 /T3

Manufacturer Part Number
PMBT5550 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT5550_T3.pdf (7 pages)

Specifications of PMBT5550 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
160 V
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.3 A
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
60 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT5550,235
Product data sheet
Supersedes data of 1999 Apr 15
dbook, halfpage
DATA SHEET
PMBT5550
NPN high-voltage transistor
DISCRETE SEMICONDUCTORS
M3D088
2004 Jan 21

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PMBT5550 /T3 Summary of contents

Page 1

DATA SHEET dbook, halfpage PMBT5550 NPN high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 21 ...

Page 2

... NXP Semiconductors NPN high-voltage transistor FEATURES • Low current (max. 300 mA) • Low voltage (max. 140 V). APPLICATIONS • Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. MARKING TYPE NUMBER PMBT5550 Note Made in Hong Kong Made in Malaysia. ...

Page 3

... NXP Semiconductors NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...

Page 4

... NXP Semiconductors NPN high-voltage transistor 160 handbook, full pagewidth h FE 120 −1 10 2004 Jan Fig.2 DC current gain; typical values. 4 Product data sheet PMBT5550 MGD814 ...

Page 5

... NXP Semiconductors NPN high-voltage transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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