PMBT5550 /T3 NXP Semiconductors, PMBT5550 /T3 Datasheet - Page 3

• Manufacturer Part Number: PMBT5550 /T3
• Description: Transistors Bipolar - BJT TRANS SW TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBT5550 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 160 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.3 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 60 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBT5550,235

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 21
R
I
I
h
V
V
C
C
f
F
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN high-voltage transistor
th(j-a)
c
e
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
E
E
C
C
C
C
C
E
C
C
C
CE
I
I
I
= 0; V
= 0; V
= I
= 0; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= I
= 10 mA; V
= 200 µA; V
C
C
C
= 5 V; (see Fig.2)
= 1 mA
= 10 mA
= 50 mA
e
c
3
= 0; V
= 0; V
CB
CB
EB
= 100 V
= 100 V; T
= 4 V
CB
EB
B
B
B
B
CONDITIONS
CE
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
note 1
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 100 MHz
= 5 V; R
CONDITIONS
amb
S
= 100 °C
= 2 kΩ;
−
−
−
60
60
20
−
−
−
−
−
−
100
−
MIN.
VALUE
500
PMBT5550
Product data sheet
50
50
50
−
250
−
150
250
1
1.2
6
30
300
10
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
V
V
pF
pF
MHz
dB
UNIT