PBSS2540M T/R NXP Semiconductors, PBSS2540M T/R Datasheet - Page 4

• Manufacturer Part Number: PBSS2540M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 450 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS2540M,315

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Jul 22
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
40 V, 0.5 A
NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 10 mA; I
= 100 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 100 mA; V
= 5 V; I
= 30 V; I
= 30 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
4
CONDITIONS
C
C
C
C
C
E
E
B
E
= 0
= 10 mA
= 100 mA; note 1
= 500 mA; note 1
= 100 mA; note 1
B
B
B
B
B
= 0
= 0; T
= 0.5 mA
= I
CE
= 5 mA
= 10 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
e
= 5 V;
= 0; f = 1 MHz
j
= 150 °C
−
−
−
200
150
50
−
−
−
−
−
−
−
250
−
MIN.
−
−
−
−
−
−
−
−
−
−
380
−
−
450
−
TYP.
PBSS2540M
Product data sheet
100
50
100
−
−
−
50
100
200
250
<500
1.2
1.1
−
6
MAX.
nA
μA
nA
mV
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT