PBSS304PZ /T3 NXP Semiconductors, PBSS304PZ /T3 Datasheet - Page 12

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PBSS304PZ /T3

Manufacturer Part Number
PBSS304PZ /T3
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS304PZ /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
4.5 A
Gain Bandwidth Product Ft
130 MHz
Dc Collector/base Gain Hfe Min
200 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
200 at 0.5 A at 2 V
Maximum Power Dissipation
2000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS304PZ,135
NXP Semiconductors
12. Revision history
Table 9.
PBSS304PZ_2
Product data sheet
Document ID
PBSS304PZ_2
Modifications:
PBSS304PZ_1
Revision history
Release date
20091208
20060919
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 16 “Reflow soldering
Figure 17 “Wave soldering
Rev. 02 — 8 December 2009
Data sheet status
Product data sheet
Product data sheet
footprint”: updated
footprint”: updated
60 V, 4.5 A PNP low V
Change notice
-
-
PBSS304PZ
Supersedes
PBSS304PZ_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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