PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 4

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PBSS3515M T/R

Manufacturer Part Number
PBSS3515M T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS3515M T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
15 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
280 MHz
Dc Collector/base Gain Hfe Min
200 at 10 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-101
Continuous Collector Current
0.5 A
Maximum Power Dissipation
430 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PBSS3515M,315
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Jul 22
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
15 V, 0.5 A
PNP low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
V
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= −10 mA; I
= −200 mA; I
= −500 mA; I
= −500 mA; I
= −500 mA; I
= −100 mA; V
= −5 V; I
= −15 V; I
= −15 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
4
CONDITIONS
C
C
C
C
C
E
E
B
E
= 0
= −10 mA
= −100 mA; note 1
= −500 mA; note 1
= −100 mA; note 1
B
B
B
B
= 0
= 0; T
= −0.5 mA
= I
CE
= −10 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
e
= −5 V;
= 0; f = 1 MHz
j
= 150 °C
200
150
90
100
MIN.
300
280
TYP.
PBSS3515M
Product data sheet
−100
−50
−100
−25
−150
−250
<500
−1.1
−0.9
10
MAX.
nA
μA
nA
mV
mV
mV
V
V
MHz
pF
UNIT

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