PBSS3515M T/R NXP Semiconductors, PBSS3515M T/R Datasheet - Page 4

• Manufacturer Part Number: PBSS3515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 280 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS3515M,315

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Jul 22
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
15 V, 0.5 A
PNP low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
V
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= −10 mA; I
= −200 mA; I
= −500 mA; I
= −500 mA; I
= −500 mA; I
= −100 mA; V
= −5 V; I
= −15 V; I
= −15 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V; I
4
CONDITIONS
C
C
C
C
C
E
E
B
E
= 0
= −10 mA
= −100 mA; note 1
= −500 mA; note 1
= −100 mA; note 1
B
B
B
B
= 0
= 0; T
= −0.5 mA
= I
CE
= −10 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
= −50 mA; note 1
e
= −5 V;
= 0; f = 1 MHz
j
= 150 °C
−
−
−
200
150
90
−
−
−
−
−
−
100
−
MIN.
−
−
−
−
−
−
−
−
−
300
−
−
280
−
TYP.
PBSS3515M
Product data sheet
−100
−50
−100
−
−
−
−25
−150
−250
<500
−1.1
−0.9
−
10
MAX.
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT