PBSS306NZ /T3 NXP Semiconductors, PBSS306NZ /T3 Datasheet - Page 8

• Manufacturer Part Number: PBSS306NZ /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS306NZ /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Dc Current Gain Hfe Max: 200 at 0.5 A at 2 V
• Maximum Power Dissipation: 2000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS306NZ,135

NXP Semiconductors
PBSS306NZ_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(Ω)
(V)
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
10
−1
−2
−1
−2
1
1
10
3
2
10
I
function of collector current; typical values
I
function of collector current; typical values
Collector-emitter saturation voltage as a
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aaa639
3
006aaa642
3
I
I
C
C
(mA)
(mA)
(1)
(2)
(3)
Rev. 02 — 11 December 2009
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
100 V, 5.1 A NPN low V
T
function of collector current; typical values
T
function of collector current; typical values
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
10
10
(1)
(2)
(3)
PBSS306NZ
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
(1)
(2)
(3)
006aaa640
006aaa644
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
8 of 14