BST51 /T3 NXP Semiconductors, BST51 /T3 Datasheet - Page 5

• Manufacturer Part Number: BST51 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BST51 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 1000 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BST51,135

NXP Semiconductors
2004 Dec 09
handbook, full pagewidth
NPN Darlington transistors
V
V
R1 = 56 Ω; R2 = 10 kΩ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= 10 V; T = 200 μs; t
5000
h FE
4000
3000
2000
1000
= −1.8 V; V
= 10 V.
10
0
−1
CC
= 10.7 V.
p
= 6 μs; t
B
= 10 kΩ; R
i
r
= 50 Ω.
= t
oscilloscope
f
≤ 3 ns.
C
= 18 Ω.
1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
5
10
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
BST50; BST51; BST52
10
2
I C (mA)
Product data sheet
MGD838
10
3