BST51 /T3 NXP Semiconductors, BST51 /T3 Datasheet - Page 8
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BST51 /T3
Manufacturer Part Number
BST51 /T3
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BST51_T3.pdf
(8 pages)
Specifications of BST51 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000 at 150 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BST51,135
Printed in The Netherlands
© NXP B.V. 2009
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/05/pp8
Date of release: 2004 Dec 09
Document order number: 9397 750 13877