BST51 /T3 NXP Semiconductors, BST51 /T3 Datasheet - Page 8

• Manufacturer Part Number: BST51 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BST51 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 1000 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BST51,135

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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/05/pp8
Date of release: 2004 Dec 09
Document order number: 9397 750 13877