PBSS4230T T/R NXP Semiconductors, PBSS4230T T/R Datasheet

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PBSS4230T T/R

Manufacturer Part Number
PBSS4230T T/R
Description
Transistors Bipolar - BJT NPN 30V 2A
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4230T_TR.pdf (7 pages)

Specifications of PBSS4230T T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
230 MHz
Dc Collector/base Gain Hfe Min
350 at 100 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
2 A
Maximum Power Dissipation
480 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4230T,215
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4230T
30 V, 2 A
NPN low V
(BISS) transistor
CEsat
Product data sheet
2003 Sep 29

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PBSS4230T T/R Summary of contents

Page 1

DATA SHEET PBSS4230T NPN low V Product data sheet DISCRETE SEMICONDUCTORS M3D088 (BISS) transistor CEsat 2003 Sep 29 ...

Page 2

... NXP Semiconductors NPN low V (BISS) transistor CEsat FEATURES • Low collector-emitter saturation voltage V • High collector current capability I • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS • Power management – ...

Page 3

... NXP Semiconductors NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage BEsat V base-emitter turn-on voltage ...

Page 5

... NXP Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Sep scale ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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