BC857BV T/R NXP Semiconductors, BC857BV T/R Datasheet - Page 2

• Manufacturer Part Number: BC857BV T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BV T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BC857BV,115

NXP Semiconductors
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
• Excellent coplanarity due to straight leads
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two
• Reduces required board space
• Reduces pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP double transistor in a SOT666 plastic package.
NPN complement: BC847BV.
MARKING
2001 Nov 07
BC857BV
package
SC-75/SC-89 packaged BISS transistors
PNP general purpose double transistor
TYPE NUMBER
MARKING CODE
3F
2
PINNING
Top view
PIN
1, 4
2, 5
6, 3
Fig.1 Simplified outline (SOT666) and symbol.
6
1
emitter
base
collector
5
2
3
4
TR1; TR2
TR1; TR2
TR1; TR2
DESCRIPTION
MAM450
Product data sheet
TR1
BC857BV
6
1
5
2
4
3
TR2