BC857BV T/R NXP Semiconductors, BC857BV T/R Datasheet - Page 4

• Manufacturer Part Number: BC857BV T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC857BV T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BC857BV,115

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
Per transistor
I
I
h
V
V
V
C
C
f
SYMBOL
amb
CBO
EBO
T
FE
BE
CEsat
BEsat
PNP general purpose double transistor
c
e
= 25 °C; unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
I
I
I
I
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= −2 mA; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= i
= −10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
4
CONDITIONS
= −30 V
= −30 V; T
= −5 V
CB
EB
CE
CE
B
B
CE
= −500 mV;
B
= −10 V; f = 1 MHz
= −0.5 mA
= −0.5 mA
= −5 V
= −5 V
= −5. mA; note 1
= −5 V;
j
= 150 °C
−
−
−
200
−600
−
−
−
−
−
100
MIN.
−
−
−
−
−655
−
−
−755
−
10
−
TYP.
Product data sheet
BC857BV
−15
−5
−100
450
−750
−100
−400
−
2.2
−
−
MAX.
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
UNIT