IS61NLP12836B-200TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP12836B-200TQLI-TR Datasheet - Page 10

• Manufacturer Part Number: IS61NLP12836B-200TQLI-TR
• Description: IC SRAM 4MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP12836B-200TQLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
STATE DIAGRAM
SYNCHRONOUS TRUTH TABLE
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by ↑
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WE = L means Write operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
10
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
WE = H means Read operation in Write Truth Table.
READ
BURST
READ
BURST
READ
External Address
External Address
External Address
BURST
BEGIN
Current Address
READ
Next Address
Next Address
Next Address
Next Address
Address
Used
N/A
N/A
N/A
N/A
N/A
(1)
WRITE
DS
DS
READ
DS
CE
H
X
X
X
X
X
X
X
X
L
L
L
L
DESELECT
WRITE
READ
CE2
X
X
X
H
X
H
X
H
X
H
X
X
L
CE2
Integrated Silicon Solution, Inc. — www.issi.com
X
X
H
X
X
X
X
X
X
L
L
L
L
WRITE
BURST
DS
ADV
DS
H
H
H
H
H
L
L
L
L
L
L
L
X
READ
WE
H
H
X
X
X
X
X
X
L
X
L
X
X
BURST
BEGIN
WRITE
BURST
WRITE
BWx
H
H
X
X
X
X
X
X
X
X
L
L
X
WRITE
OE
H
H
X
X
X
X
X
X
X
X
X
L
L
BURST
WRITE
CKE
H
L
L
L
L
L
L
L
L
L
L
L
L
CLK
09/10/07
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Rev. D