IS61NLP12836B-200TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP12836B-200TQLI-TR Datasheet - Page 18

• Manufacturer Part Number: IS61NLP12836B-200TQLI-TR
• Description: IC SRAM 4MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP12836B-200TQLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
SLEEP MODE ELECTRICAL CHARACTERISTICS
SLEEP MODE TIMINg
18
Symbol
I
t
t
t
t
Sb
PdS
PuS
ZZI
rZZI
2
CLK
ZZ
Isupply
All Inputs
(except ZZ)
Outputs
(Q)
Parameter
Current during SLEEP MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SLEEP current
ZZ inactive to exit SLEEP current
Deselect or Read Only
ZZ setup cycle
t
ZZI
t
PDS
I
SB2
High-Z
Conditions
ZZ ≥ V
Integrated Silicon Solution, Inc. — www.issi.com
Ih
Min.
2
2
2
0
t
Deselect or Read Only
RZZI
ZZ recovery cycle
t
PUS
Max.
35
Don't Care
operation
Normal
cycle
cycle
cycle
cycle
Unit
mA
ns
09/10/07
Rev. D