IS61NLP12836B-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP12836B-200TQI-TR Datasheet - Page 12

• Manufacturer Part Number: IS61NLP12836B-200TQI-TR
• Description: IC SRAM 4MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP12836B-200TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
WRITE TRUTH TABLE
Notes
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE
12
External Address
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c
WRITE BYTE d
WRITE ALL BYTEs
WRITE ABORT/NOP
:
A1 A0
00
01
10
11
1st Burst Address
(x32/x36)
A1 A0
WE
H
L
L
L
L
L
L
01
00
11
10
BWa
X
H
H
H
H
L
L
2nd Burst Address
BWb
(MODE = V
H
H
H
H
X
L
L
A1 A0
10
11
00
01
BWc
dd
X
H
H
H
H
L
L
Integrated Silicon Solution, Inc. — www.issi.com
or NC)
BWd
3rd Burst Address
X
H
H
H
H
L
L
A1 A0
11
10
01
00
09/10/07
Rev. D