IS61NLP12836B-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP12836B-200TQI-TR Datasheet - Page 27

• Manufacturer Part Number: IS61NLP12836B-200TQI-TR
• Description: IC SRAM 4MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP12836B-200TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PACKAGING INFORMATION
Plastic Ball Grid Array
Package Code: B (119-pin)
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
02/12/03
Sym.
N0.
Leads
A
A1
A2
A3
A4
b
D
D1
D2
E
E1
E2
e
D
21.80
19.40
13.80
11.90
Min.
0.50
0.80
1.30
0.60
MILLIMETERS
—
20.32 BSC
0.56 BSC
7.62 BSC
1.27 BSC
119
22.20
19.60
14.20
12.10
Max.
2.41
0.70
1.00
1.70
0.90
E2
E
0.020
0.032
0.051
0.024
0.858
0.764
0.543
0.469
Min.
—
A4
0.022 BSC
0.800 BSC
0.300 BSC
0.050 BSC
INCHES
D2
A3
30ϒ
0.095
0.028
0.039
0.067
0.035
0.874
0.772
0.559
0.476
Max.
A2
1-800-379-4774
A
A1
e
Notes:
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protrusion and
4. Formed leads shall be planar with respect to one another within
should be measured from the bottom of the package.
0.004 inches at the seating plane.
SEATING PLANE
D1
7
6
5
E1
4
3 2
φ
b (119X)
1
G
M
A
B
C
D
E
F
H
K
N
P
R
T
U
J
L