MT48LC8M16LFB4-8 IT:G Micron Technology Inc, MT48LC8M16LFB4-8 IT:G Datasheet - Page 55

• Manufacturer Part Number: MT48LC8M16LFB4-8 IT:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC8M16LFB4-8 IT:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 21:
Table 22:
Table 23:
Table 24:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. L 10/07 EN
Parameter/Condition
Operating current: Active mode; Burst = 2;
READ or WRITE;
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
banks active after
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
Auto refresh current: CKE = HIGH;
CS# = HIGH
Temperature-Compensated Self Refresh (TCSR)
Parameter/Condition
Parameter
Parameter
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 0)
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 1)
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 0)
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/Output capacitance: DQ
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/Output capacitance: DQ
I
Notes 1, 3, 6, 11, 13, 31 apply to entire table; notes appear on page 56; V
V
I
Note 4 applies to entire table; notes appear on page 56; V
±0.2V or V
Capacitance (FBGA Pacakge)
Note 2 applies to entire table; notes appear on page 56
Capacitance (TSOP Pacakge)
Note 2 applies to entire table; notes appear on page 56
DD
DD
DD
t
RC =
7 Self Refresh Current Options (x32)
Q = 2.5V ±0.2V or V
Specifications And Conditions (x32)
t
RCD met; No accesses in progress
t
RC (MIN)
DD
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V, V
DD
t
t
RFC =
RFC = 15.625µs
Q = +1.8V ±0.15V
t
RFC (MIN)
DD
Q = +1.8V ±0.15V
55
Symbol
Symbol
Symbol
I
I
I
I
I
I
DD1
DD2
DD3
DD4
DD5
DD6
C
C
C
C
C
C
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IO
IO
I1
I2
I1
I2
DD
= V
-75M
150
450
130
235
128Mb: x16, x32 Mobile SDRAM
DD
45
Temperature
3
Min
Min
Q = +3.3V ±0.3V or V
1.5
1.5
3.0
2.5
2.5
4.0
Max
85ºC
70ºC
45ºC
15ºC
DD
Max
150
450
115
220
45
-8
3
Electrical Specifications
= V
Max
Max
3.5
3.8
6.0
3.5
3.8
6.0
DD
©2001 Micron Technology, Inc. All rights reserved.
Q = +3.3V ±0.3V or V
-75M/-8/-10
120
450
110
180
-10
40
3
1000
550
400
350
DD
Units
Units
pF
pF
pF
pF
pF
pF
= V
Units
mA
mA
mA
mA
mA
µA
DD
Q = 2.5V
Notes
Notes
Units
Notes
12, 18,
19, 32,
18, 19
12, 33
18, 19
µA
µA
µA
µA
28
29
30
28
29
30
DD
19
33
=