MT48V8M16LFB4-8 IT:G Micron Technology Inc, MT48V8M16LFB4-8 IT:G Datasheet - Page 66
![IC SDRAM 128MBIT 125MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48V8M16LFB4-8 IT:G
Manufacturer Part Number
MT48V8M16LFB4-8 IT:G
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48V8M16LFB4-8 IT:G
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
2.5V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 46:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. L 10/07 EN
DQMU, DQML
A0–A9, A11
COMMAND
BA0, BA1
CKE
A10
CLK
DQ
t CKS
t CMS
t AS
t AS
t AS
Single Read – With Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
Notes:
t AH
t AH
t AH
t CK
t RCD
t RAS
t RC
T1
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
NOP
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 52.
t CL
T2
NOP 3
t CH
T3
NOP 3
ENABLE AUTO PRECHARGE
t CMS
66
COLUMN m 2
BANK
T4
READ
t CMH
CAS Latency
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS would be violated.
T5
NOP
t AC
128Mb: x16, x32 Mobile SDRAM
t RP
D
T6
OUT
NOP
t OH
m
t HZ
©2001 Micron Technology, Inc. All rights reserved.
ACTIVE
BANK
ROW
T7
ROW
UNDEFINED
Timing Diagrams
T8
NOP
DON’T CARE